? by semikron 0698 b 16 C 41 skiip 82 ahb 08 absolute maximum ratings symbol conditions 1) values units bridge rectifier v rrm i d i fsm /i tsm i2t t heatsink = 80 c t p = 10 ms; sin. 180 c, t j = 25 c t p = 10 ms; sin. 180 c, t j = 25 c 800 35 550 5000 v a a a2s igbt chopper v ces v ges i c i cm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 600 20 30 / 20 60 / 40 v v a a freewheeling diode 2) v rrm i f i fm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 600 57 / 38 114 / 76 v a a t j t j t stg v isol diode & igbt thyristor ac, 1 min. C 40 ... + 150 C 40 ... + 125 C 40 ... + 125 2500 c c c v characteristics symbol conditions 1) min. typ. max. units diode - rectifier v f v to r t r thjh i f = 35 a t j = 125 c t j = 125 c t j = 125 c per diode C C C C 1,15 0,8 10 C C C C 1,6 v v m w k/w thyristor - rectifier v t v t (to) r t r thjh i gd v gt i gt i h i l dv/dt cr di/dt cr i f = 75 a t j = 25 c t j = 125 c t j = 125 c per thyristor t j = 125 c C C C C 3 C C C C 500 C C C C C C C C 200 400 C C 1,8 1,0 10 1,3 C 3 100 C C C 125 v v m w k/w ma v ma ma ma v/ m s a/ m s igbt - chopper v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 30 a t j = 25 (125) c v cc = 300 v; v ge = 15 v i c = 30 a; t j = 125 c r gon = r goff = 33 w inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt C C C C C C C C 2,1(2,2) 50 80 250 500 4,0 1,6 C 2,7(2,8) 100 160 370 750 C C 1,8 v ns ns ns ns mj nf k/w t j = 25 c t j = 25 c t j = 125 c miniskiip 8 semikron integrated intelligent power skiip 82 ahb 08 half controlled 3-phase bridge rectifier + igbt braking chopper case m8a ul recognized file no. e63532 ? specification of temperature sensor see part a ? common characteristics see page b 16 C 3 options ? also available with uncontrolled rectifier (called 82 anb 08) ? also available with faster igbts (type ... 063), data sheet on request 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast recovery)
b 16 C 42 0698 ? by semikron skiip 82 ahb 08 characteristics symbol conditions 1) min. typ. max. units diode 2) - freewheeling v f = v ec v to r t i rrm q rr e off r thjh i f = 50 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 50 a; v r = C 300 v di f /dt = C 800 a/ m s v ge = 0 v, t j = 125 c per diode C C C C C C C 1,45(1,4) 0,85 11 50 5,0 1,5 C 1,7(1,7) 0,9 16 C C C 1,2 v v m w a m c mj k/w temperature sensor r ts t = 25 / 100 c 1000 / 1670 w mechanical data m 1 case case to heatsink, si units mechanical outline see pages b 16 C 13 and b 16 C 14 2,5 C m8a 3,5 nm miniskiip 8 semikron integrated intelligent power skiip 82 ahb 08 half controlled 3-phase bridge rectifier + igbt braking chopper case m8a
? by semikron 0698 b 16 C 43 fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) fig. 1 typ. output characteristic, t p = 80 m s; 25 c fig. 2 typ. output characteristic, t p = 80 m s; 125 c fig. 5 typ. gate charge characteristic fig. 6 typ. capacitances vs. v ce t j = 125 c v ce = 300 v v ge = 15 v i c = 30 a t j = 125 c v ce = 300 v v ge = 15 v r g = 33 w v ge = 0 v f = 1 mhz i cpuls = 30 a
b 16 C 44 0698 ? by semikron fig. 7 gate trigger characteristics
? by semikron 0698 b 16 C 3 fig. 9 turn-off safe operating area (rbsoa) of the igbt fig. 10 safe operating area at short circuit of the igbt t j = 150 c v ge = 15 v t sc = 10 m s l ext < 25 nh t j = 150 c v ge = 15 v fig. 7 rated current of the igbt i cop / i c = f (t h ) t j = 150 c v ge = 3 15 v 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 i cop /i c mini0607 t h [c] fig. 11 typ. freewheeling diode forward characteristic fig. 12 forward characteristic of the input bridge diode 2. common characteristics of miniskiip miniskiip 600 v
miniskiip 8 input bridge part skiip 82 anb 08 skiip 83 anb 08 skiip 81 anb 15 skiip 82 anb 15 skiip 83 anb 15 skiip 83 ahb 15 skiip 83 atb 15 circuit anb case m8a
miniskiip 8 input bridge part skiip 82 anb 08 skiip 83 anb 08 skiip 81 anb 15 skiip 82 anb 15 skiip 83 anb 15 skiip 83 ahb 15 skiip 83 atb 15 case m8a layout and connections for the customers printed circuit board pin connection diode bridge anb halfcontrolled ahb thyristor bridge atb 1 reserved reserved g2 bot 2~ 1~ 1~ 1 3 ~ 2 ~ 2 ~ 2 4 reserved reserved g1 bot 5 reserved g2 top g2 top 6 ~ 3 ~ 3 ~ 3 7 reserved g1 top g1 top 8 reserved g3 top g3 top 9 reserved reserved g3 bot 10 + + + 11C C C 12 + + + 13C C C 14 gate br gate br gate br 15 br br br 16 t + t + t + 17t Ct Ct C circuit ahb circuit atb
|
